Shear Failure of Inconel 718 under Dynamic Loads

Kinetics of deformation and fracture of nickel–iron alloy Inconel 718 under dynamic shear loading was measured using a split torsional Hopkinson bar facility and high-speed photography. Tubular specimens with a reduced gage length and a starter notch were sheared at strain rates up to 6 × 10³ s⁻¹. High-speed photographs of fiducial lines scribed on the specimen surface showed the development of local strains and cracking. This paper describes the experimental and analytical procedures, illustrates average and local plastic strain evolution, and presents shear crack initiation times and propagation speeds.     

QoS enhancement in OFDM based systems under transceiver impairments

Broadband wireless systems generally use orthogonal frequency division multiplexing (OFDM) with link adaptation (LA) to achieve high throughput while meeting bit error rate (BER) constraint. OFDM systems are known to be affected by non-linearity of high power amplifier (HPA) at transmitter, carrier frequency offset (CFO), symbol timing offset (STO) and channel estimation error at the receiver. The delay in feedback of channel state information (CSI) further affects the performance of LA procedures. The focus of this work is on performance analysis in presence of simultaneous affect of all these impairments on LA based OFDM systems. The results are found to be useful for threshold readjustment which is essential for successful implementation of LA scheme to counter the effects of change in operating conditions from ideal to as listed above.     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.     

A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy

Threshold switching is a phenomenon where the resistivity of an insulating material changes and the insulator exhibits metallic behavior. This could be explained by phase transformation in oxide materials; however, this behavior is also seen in amorphous insulators. In this study, through an ex-situ experiment using transmission electron microscopy (TEM), we proved that threshold switching of amorphous NbO₂ accompanies local crystallization. The change in I–V characteristics after electroforming was examined by evaluating the concentration profile. Atom probe tomography (APT) combined with in-situ TEM probing technique was performed to understand the threshold switching in amorphous NbO₂. The local crystallization in amorphous NbO₂ was validated by the observed difference in time-of-flight (ToF) between amorphous and crystalline NbO₂. We concluded that the slower ToF of amorphous NbO₂ (a-NbO₂) compared with crystalline NbO₂ (c-NbO₂) is due to the resistivity difference and trap-assisted recombination.     

一类传染病模型

利用稳定性理论和齐次向量场的性质对一类传染病模型的一般情形进行研究,通过对R2中相应系统的平衡点的存在性和稳定性的分析,得出该类传染病持续生存和最终消亡的阈值,而且它与治愈者的死亡率以及治愈者向易感者的转化率无关.     

Two-body threshold spectral analysis, the critical case

We study in dimension d?2 low-energy spectral and scattering asymptotics for two-body d-dimensional Schrödinger operators with a radially symmetric potential falling off like −γr−2, γ>0. We consider angular momentum sectors, labelled by l=0,1,…, for which γ>²(l+d/2−1). In each such sector the reduced Schrödinger operator has infinitely many negative eigenvalues accumulating at zero. We show that the resolvent has a non-trivial oscillatory behaviour as the spectral parameter approaches zero in cones bounded away from the negative half-axis, and we derive an asymptotic formula for the phase shift.     

Long term behaviors of stochastic single-species growth models in a polluted environment

Thresholds for extinction and persistence are important for assessing the risk of mortality in systems exposed to toxicant. In this paper, three single-species models with random perturbation in a polluted environment are proposed and investigated. One is the generalized logistic model and the other two are the stochastic resource–consumer models of Leslie and Gallopin. For each model, the survival threshold is obtained in some cases. In general, each threshold is determined by intensity of the random noise, the mean stress measure in organisms, the population intrinsic growth rate and the stress response rate.     

Threshold effects on renormalization group running of neutrino parameters in the low-scale seesaw model

We show that, in the low-scale type-I seesaw model, renormalization group running of neutrino parameters may lead to significant modifications of the leptonic mixing angles in view of so-called seesaw threshold effects. Especially, we derive analytical formulas for radiative corrections to neutrino parameters in crossing the different seesaw thresholds, and show that there may exist enhancement factors efficiently boosting the renormalization group running of the leptonic mixing angles. We find that, as a result of the seesaw threshold corrections to the leptonic mixing angles, various flavor symmetric mixing patterns (e.g., bi-maximal and tri-bimaximal mixing patterns) can be easily accommodated at relatively low energy scales, which is well within the reach of running and forthcoming experiments (e.g., the LHC).